{"id":4780,"date":"2024-01-10T20:46:57","date_gmt":"2024-01-10T20:46:57","guid":{"rendered":"https:\/\/electronicspro.pk\/index.php\/product\/mgw20n60d-igbt-power-transistor\/"},"modified":"2024-01-10T20:46:58","modified_gmt":"2024-01-10T20:46:58","slug":"mgw20n60d-igbt-power-transistor","status":"publish","type":"product","link":"https:\/\/electronicspro.pk\/index.php\/product\/mgw20n60d-igbt-power-transistor\/","title":{"rendered":"Mgw20n60d Igbt Power Transistor"},"content":{"rendered":"<p><span style=\"font-size:14px;\"><span style=\"left: 89.5564px; top: 193.897px; transform: scaleX(0.922508);\">This<\/span><strong><span style=\"left: 111.706px; top: 193.897px; transform: scaleX(0.92666);\"> Insulated Gate Bipolar T<\/span><\/strong><span style=\"left: 247.481px; top: 193.897px; transform: scaleX(0.929841);\"><strong>ransistor (IGBT<\/strong>) is<\/span><span style=\"left: 346.045px; top: 193.897px; transform: scaleX(0.932109);\"> co-packaged with<\/span><span style=\"left: 99.3782px; top: 208.22px; transform: scaleX(0.880306);\"> a soft<\/span><span style=\"left: 122.488px; top: 208.22px; transform: scaleX(1.013);\"> recover<\/span><span style=\"left: 181.848px; top: 208.22px; transform: scaleX(0.980297);\">y ultra-fast<\/span><span style=\"left: 239.879px; top: 208.22px; transform: scaleX(0.989791);\"> rectifie<\/span><span style=\"left: 284.621px; top: 208.22px; transform: scaleX(0.92503);\">r a<\/span><span style=\"left: 300.568px; top: 208.22px; transform: scaleX(0.924234);\">nd u<\/span><span style=\"left: 325.744px; top: 208.22px; transform: scaleX(0.917341);\">se s a<\/span><span style=\"left: 356.531px; top: 208.22px; transform: scaleX(0.911803);\">n advanced termination<\/span><span style=\"left: 137.92px; top: 222.47px; transform: scaleX(0.93266);\"> scheme<\/span><span style=\"left: 185.467px; top: 222.47px; transform: scaleX(0.936879);\"> to p<\/span><span style=\"left: 212.858px; top: 222.47px; transform: scaleX(1.01167);\">rovid<\/span><span style=\"left: 239.363px; top: 222.47px; transform: scaleX(0.915495);\">e a<\/span><span style=\"left: 257.894px; top: 222.47px; transform: scaleX(0.919187);\">n e<\/span><span style=\"left: 276.5px; top: 222.47px; transform: scaleX(0.963833);\">nhance<\/span><span style=\"left: 316.221px; top: 222.47px; transform: scaleX(0.915495);\">d a<\/span><span style=\"left: 334.752px; top: 222.47px; transform: scaleX(0.938233);\">nd r<\/span><span style=\"left: 357.491px; top: 222.47px; transform: scaleX(0.945617);\">eliabl<\/span><span style=\"left: 386.064px; top: 222.47px; transform: scaleX(0.915495);\">e high voltage<\/span><span style=\"left: 77.8956px; top: 236.719px; transform: scaleX(0.948858);\">\u2013blocking<\/span><span style=\"left: 165.09px; top: 236.719px; transform: scaleX(0.981664);\"> capability<\/span><span style=\"left: 217.214px; top: 236.719px; transform: scaleX(1.00993);\">. Short circuit rated IGBT\u2019<\/span><span style=\"left: 352.324px; top: 236.719px; transform: scaleX(0.965065);\">s are<\/span><span style=\"left: 379.346px; top: 236.719px; transform: scaleX(0.957903);\"> specifically<\/span><span style=\"left: 101.668px; top: 251.041px; transform: scaleX(0.915662);\"> suite<\/span><span style=\"left: 131.939px; top: 251.041px; transform: scaleX(0.93208);\">d f<\/span><span style=\"left: 146.926px; top: 251.041px; transform: scaleX(0.92285);\">or a<\/span><span style=\"left: 169.149px; top: 251.041px; transform: scaleX(0.933174);\">pplications<\/span><span style=\"left: 225.186px; top: 251.041px; transform: scaleX(0.929443);\"> requirin<\/span><span style=\"left: 269.853px; top: 251.041px; transform: scaleX(0.901633);\">g a g<\/span><span style=\"left: 299.681px; top: 251.041px; transform: scaleX(0.952645);\">uarantee<\/span><span style=\"left: 346.415px; top: 251.041px; transform: scaleX(0.878575);\">d s<\/span><span style=\"left: 364.061px; top: 251.041px; transform: scaleX(0.946893);\">hor<\/span><span style=\"left: 381.189px; top: 251.041px; transform: scaleX(0.949915);\">t circuit withstand<\/span><span style=\"left: 130.903px; top: 265.29px; transform: scaleX(0.934895);\"> tim<\/span><span style=\"left: 152.831px; top: 265.29px; transform: scaleX(0.871191);\">e s<\/span><span style=\"left: 170.698px; top: 265.29px; transform: scaleX(0.98462);\">uc<\/span><span style=\"left: 183.988px; top: 265.29px; transform: scaleX(0.900727);\">h a<\/span><span style=\"left: 202.446px; top: 265.29px; transform: scaleX(0.939672);\">s M<\/span><span style=\"left: 223.561px; top: 265.29px; transform: scaleX(1.00873);\">oto<\/span><span style=\"left: 241.133px; top: 265.29px; transform: scaleX(0.917044);\">r C<\/span><span style=\"left: 259px; top: 265.29px; transform: scaleX(1.01588);\">ontro<\/span><span style=\"left: 287.868px; top: 265.29px; transform: scaleX(0.894151);\">l D<\/span><span style=\"left: 304.405px; top: 265.29px; transform: scaleX(1.0205);\">rives<\/span><span style=\"left: 331.427px; top: 265.29px; transform: scaleX(0.964385);\">. F<\/span><span style=\"left: 347.3px; top: 265.29px; transform: scaleX(0.91429);\">as<\/span><span style=\"left: 360.59px; top: 265.29px; transform: scaleX(0.88593);\">t switching characteristics<\/span><span style=\"left: 148.033px; top: 279.612px; transform: scaleX(0.877252);\"> of <strong>IGBT <a href=\"\/products\/irfb3307-mosfetin-pakistan\" target=\"_blank\" rel=\"noopener noreferrer\" title=\"Irfb3307 mosfetin pakistan \u2013 digilog.pk\">MOSFET<\/a><\/strong> r<\/span><span style=\"left: 163.02px; top: 279.612px; transform: scaleX(0.905122);\">esul<\/span><span style=\"left: 184.8px; top: 279.612px; transform: scaleX(0.909042);\">t in inefficient<\/span><span style=\"left: 248.073px; top: 279.612px; transform: scaleX(0.929551);\"> operations<\/span><span style=\"left: 308.54px; top: 279.612px; transform: scaleX(0.91651);\"> at high<\/span><span style=\"left: 335.193px; top: 279.612px; transform: scaleX(0.921602);\"> f<\/span><span style=\"left: 359.335px; top: 279.612px; transform: scaleX(0.942876);\">requencies.<\/span><span style=\"left: 77.8932px; top: 293.862px; transform: scaleX(0.959053);\">Co\u2013packaged IGBT\u2019<\/span><span style=\"left: 182.88px; top: 293.862px; transform: scaleX(0.935967);\">s save space, reduce assembly time and cost.<\/span><\/span><\/p>\n<h2><strong>Features And Specifications Of MGW20N60D IGBT MOSFET Power Transistor:<\/strong><\/h2>\n<ul>\n<li><span style=\"font-size:14px;\"><strong>Type Designator:<\/strong> MGW20N60D<\/span><\/li>\n<li><span style=\"font-size:14px;\"><strong>Type of IGBT Channel:<\/strong> N-Channel<\/span><\/li>\n<li><span style=\"font-size:14px;\">Maximum Power Dissipation <strong>(Pc<\/strong>), W: 142W<\/span><\/li>\n<li><span style=\"font-size:14px;\">Maximum Collector-Emitter Voltage<strong> |Vce|<\/strong>, V: 600V<\/span><\/li>\n<li><span style=\"font-size:14px;\">Collector-Emitter saturation Voltage<strong> |Vcesat<\/strong>|, V: 2.3V<\/span><\/li>\n<li><span style=\"font-size:14px;\">Maximum Gate-Emitter Voltage<strong> |Veg|<\/strong>, V: 20V<\/span><\/li>\n<li><span style=\"font-size:14px;\">Maximum Collector Current <strong>|Ic|<\/strong>, A: 20A<\/span><\/li>\n<li><span style=\"font-size:14px;\">Maximum Junction Temperature <strong>(Tj)<\/strong>, \u00b0C: 150<\/span><\/li>\n<li><span style=\"font-size:14px;\">Rise Time, <strong>nS<\/strong>: 59<\/span><\/li>\n<li><span style=\"font-size:14px;\">Maximum Collector Capacity <strong>(Cc)<\/strong>, pF: 2280pF<\/span><\/li>\n<li><span style=\"font-size:14px;\"><span style=\"left: 93.471px; top: 355.141px; transform: scaleX(0.961024);\">High Short Circuit Capability<\/span> <\/span><\/li>\n<li><span style=\"font-size:14px;\"> <span style=\"left: 93.4699px; top: 369.464px; transform: scaleX(0.958876);\">Soft Recovery Free Wheeling Diode is included in the package<\/span><\/span><\/li>\n<\/ul>\n<p><a href=\"https:\/\/alltransistors.com\/pdfview.php?doc=mgw20n60d.pdf&amp;dire=_motorola\" target=\"_blank\" rel=\"noopener\"><strong><span style=\"font-size:16px;\">MGW20N60D DataSheet <\/span><\/strong><\/a><\/p>\n<h2><strong>Package Include:<\/strong><\/h2>\n<ul>\n<li><span style=\"font-size:14px;\">1 x MGW20N60D IGBT IC<\/span><\/li>\n<\/ul>\n<p><span style=\"font-size:14px;\">Best online shopping website for MGW20N60D IGBT Power <a href=\"https:\/\/hallroad.org\/gp-4063d-mosfet-in-pakistan.html\" target=\"_blank\" rel=\"noopener\">MOSFET<\/a> Transistor\u00a0 insulated gate bipolar transistor in a cheap price in Lahore Islamabad Karachi Faislabad Multan Quetta Sukkur Peshawar Rawalpindi Gujranwala and all over Pakistan <\/span><\/p>\n","protected":false},"excerpt":{"rendered":"<p>This Insulated Gate Bipolar Transistor (IGBT) is co-packaged with a soft recovery ultra-fast rectifier and use s an advanced termination scheme to provide an enhanced and reliable high voltage\u2013blocking capability. Short circuit rated IGBT\u2019s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics of [&hellip;]<\/p>\n","protected":false},"featured_media":12829,"comment_status":"open","ping_status":"closed","template":"","meta":[],"product_cat":[5886,5902],"product_tag":[2760,4416,4417,1182],"class_list":{"0":"post-4780","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-semiconductor-components-ics","7":"product_cat-transistor","8":"product_tag-fet","9":"product_tag-field-effect-transistor","10":"product_tag-mgw20n60d-igbt","11":"product_tag-transistor","13":"first","14":"instock","15":"shipping-taxable","16":"purchasable","17":"product-type-simple"},"yoast_head":"<!-- This site is optimized with the Yoast SEO Premium plugin v21.9 (Yoast SEO v22.0) - https:\/\/yoast.com\/wordpress\/plugins\/seo\/ -->\n<title>Mgw20n60d Igbt Power Transistor - Educational arduino<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/electronicspro.pk\/index.php\/product\/mgw20n60d-igbt-power-transistor\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Mgw20n60d Igbt Power Transistor\" \/>\n<meta property=\"og:description\" content=\"This Insulated Gate Bipolar Transistor (IGBT) is co-packaged with a soft recovery ultra-fast rectifier and use s an advanced termination scheme to provide an enhanced and reliable high voltage\u2013blocking capability. Short circuit rated IGBT\u2019s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics of [&hellip;]\" \/>\n<meta property=\"og:url\" content=\"https:\/\/electronicspro.pk\/index.php\/product\/mgw20n60d-igbt-power-transistor\/\" \/>\n<meta property=\"og:site_name\" content=\"Educational arduino\" \/>\n<meta property=\"article:modified_time\" content=\"2024-01-10T20:46:58+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/electronicspro.pk\/wp-content\/uploads\/2024\/01\/mgw20n60d-igbt-power-transistor-563.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"500\" \/>\n\t<meta property=\"og:image:height\" content=\"500\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"Price\" \/>\n\t<meta name=\"twitter:data1\" content=\"&#8360;&nbsp;550\" \/>\n\t<meta name=\"twitter:label2\" content=\"Availability\" \/>\n\t<meta name=\"twitter:data2\" content=\"In stock\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\/\/schema.org\",\"@graph\":[{\"@type\":\"WebPage\",\"@id\":\"https:\/\/electronicspro.pk\/index.php\/product\/mgw20n60d-igbt-power-transistor\/\",\"url\":\"https:\/\/electronicspro.pk\/index.php\/product\/mgw20n60d-igbt-power-transistor\/\",\"name\":\"Mgw20n60d Igbt Power Transistor - Educational arduino\",\"isPartOf\":{\"@id\":\"https:\/\/electronicspro.pk\/#website\"},\"datePublished\":\"2024-01-10T20:46:57+00:00\",\"dateModified\":\"2024-01-10T20:46:58+00:00\",\"breadcrumb\":{\"@id\":\"https:\/\/electronicspro.pk\/index.php\/product\/mgw20n60d-igbt-power-transistor\/#breadcrumb\"},\"inLanguage\":\"en-US\",\"potentialAction\":[{\"@type\":\"ReadAction\",\"target\":[\"https:\/\/electronicspro.pk\/index.php\/product\/mgw20n60d-igbt-power-transistor\/\"]}]},{\"@type\":\"BreadcrumbList\",\"@id\":\"https:\/\/electronicspro.pk\/index.php\/product\/mgw20n60d-igbt-power-transistor\/#breadcrumb\",\"itemListElement\":[{\"@type\":\"ListItem\",\"position\":1,\"name\":\"Home\",\"item\":\"https:\/\/electronicspro.pk\/\"},{\"@type\":\"ListItem\",\"position\":2,\"name\":\"Shop\",\"item\":\"https:\/\/electronicspro.pk\/index.php\/shop\/\"},{\"@type\":\"ListItem\",\"position\":3,\"name\":\"Mgw20n60d Igbt Power Transistor\"}]},{\"@type\":\"WebSite\",\"@id\":\"https:\/\/electronicspro.pk\/#website\",\"url\":\"https:\/\/electronicspro.pk\/\",\"name\":\"Educational arduino\",\"description\":\"\",\"potentialAction\":[{\"@type\":\"SearchAction\",\"target\":{\"@type\":\"EntryPoint\",\"urlTemplate\":\"https:\/\/electronicspro.pk\/?s={search_term_string}\"},\"query-input\":\"required name=search_term_string\"}],\"inLanguage\":\"en-US\"}]}<\/script>\n<meta property=\"product:price:amount\" content=\"550\" \/>\n<meta property=\"product:price:currency\" content=\"PKR\" \/>\n<meta property=\"og:availability\" content=\"instock\" \/>\n<meta property=\"product:availability\" content=\"instock\" \/>\n<meta property=\"product:retailer_item_id\" content=\"b731,L5,Th3,KRT\" \/>\n<meta property=\"product:condition\" content=\"new\" \/>\n<!-- \/ Yoast SEO Premium plugin. -->","yoast_head_json":{"title":"Mgw20n60d Igbt Power Transistor - Educational arduino","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/electronicspro.pk\/index.php\/product\/mgw20n60d-igbt-power-transistor\/","og_locale":"en_US","og_type":"article","og_title":"Mgw20n60d Igbt Power Transistor","og_description":"This Insulated Gate Bipolar Transistor (IGBT) is co-packaged with a soft recovery ultra-fast rectifier and use s an advanced termination scheme to provide an enhanced and reliable high voltage\u2013blocking capability. 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